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SMD Type
Silicon PNP Triple Diffused Type 2SB1667
TO-252
+0.15 1.50 -0.15
Transistors
Features
Low collector saturation voltage.
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating -60 -60 -7 -3 -0.5 1.5 25 150 -55 to +150 Unit V V V A A W W
3.80
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1
SMD Type
2SB1667
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO Testconditons VCB = -60 V, IE = 0 VEB = -7 V, IC = 0 -60 60 20 Min
Transistors
Typ
Max -100 -100
Unit iA iA V
V(BR)CEO IC=-50mA, IB=0 hFE VCE = -5 V, IC = -0.5 A VCE = -5 V, IC = -3 A VCE (sat) IC = -3 A, IB = -0.3 A VBE fT Cob ton tstg tf VCE = -5A, IC =-0.5 A VCE = -5V, IC =-0.5 A VCB = -10V, IE = 0, f = 1 MHz
300
-0.5 -0.7 9 150 0.4 1.7 0.5
-1.7 -1.0
V V MHz pF is is is
hFE Classification
Rank hFE O 60 120 Y 100 200
2
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